BUAF BUAF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). Details, datasheet, quote on part number: BUAF. BUAF. DESCRIPTION. ·With TO-3PFa package. ·High voltage. ·High speed switching. APPLICATIONS. ·For use in horizontal deflection circuit of colour TV. BUAF datasheet, BUAF circuit, BUAF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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The various options that a power transistor designer has are outlined. Application information Where application information is given, it is advisory and does not form part of the specification.

TRANSISTOR BUAF datasheet & applicatoin notes – Datasheet Archive

Following the storage time of the transistorthe collector current Ic will drop to zero. No liability will be accepted by the publisher for any consequence of its use.

Stress above one or more of the limiting values may cause permanent damage to the device. II Extension for repetitive pulse operation.

BU2508AF Datasheet PDF

Now turn the transistor off by applying a negative current drive to the base. Typical base-emitter saturation voltage.

RF power, phase and DC parameters are measured and recorded. We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. Reproduction in whole datasheeg in part is prohibited without the prior written consent of the copyright owner.


September 2 Rev 1. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

The transistor characteristics are divided into three areas: September 6 Rev 1. Test circuit for VCEOsust.

No abstract text available Text: The current in Lc ILc is still. Sheet resistance of the dataasheettransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. Exposure to limiting values for extended periods may affect device reliability.

The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor. Product specification This data sheet contains final product specifications. Previous 1 2 Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress. SOT; The seating plane is electrically isolated from all terminals. Transistor design fatasheet for the lowest power dissipation infactsheet FS, An Electronic Ballast: Refer to mounting instructions for F-pack envelopes.

BUAF 데이터시트(PDF) – NXP Semiconductors

Non-volatile, penetrate plastic packages and thus shorten the life of the transistor. Switching times test circuit. XatasheetTypical Application: UNIT 80 – pF 5. Figure 2techniques and computer-controlled wire bonding of the assembly.


(PDF) BU2508AF Datasheet download

Typical DC current gain. The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of bu25508af. September 7 Rev 1. Typical collector-emitter saturation voltage.

Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. UNIT – – 1. Philips customers using or selling these products for bu508af in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. The information presented dataheet this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

Typical collector dataxheet and fall time. September 1 Rev 1. The switching timestransistor technologies. Oscilloscope display for VCEOsust. Forward bias safe operating area. The current requirements of the transistor switch varied between 2A.